DMTH10H017LPDQ Datasheet - DIODES

100V Dual N-CHANNEL MOSFET

DMTH10H017LPDQ Features

* Rated to +175°C

* Ideal for High Ambient Temperature Environments

* 100% Unclamped Inductive Switching (UIS) Test in Production

* Ensures More Reliable and Robust End Application

* High Conversion Efficiency

* Low RDS(ON)

* Minimizes On State Losses

* Low Inp

DMTH10H017LPDQ General Description

and Applications This MOSFET is designed to meet the stringent requirements of automotive applications. It is qualified to AEC-Q101, supported by a PPAP, and is ideal for use in: * Synchronous Rectifier * DC-DC Converters * Primary Side Switching Mechanical Data * Case: PowerDI®5060.

DMTH10H017LPDQ Datasheet (567.04 KB)

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Part number:

DMTH10H017LPDQ

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DIODES ↗

File Size:

567.04 KB

Description:

100v dual n-channel mosfet.
Product Summary BVDSS 100V RDS(ON) Max 17.4mΩ @ VGS = 10V 30.3mΩ @ VGS = 4.5V DMTH10H017LPDQ Green 100V 175°C DUAL N-CHANNEL ENHANCEMENT MODE MOSFE.

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DMTH10H017LPDQ 100V Dual N-CHANNEL MOSFET DIODES

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DMTH10H017LPDQ Features

DMTH10H017LPDQ General Description

Datasheet Details

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