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ZXTN19020DFF - NPN HIGH GAIN POWER TRANSISTOR

General Description

Advanced process capability has been used to maximize the performance of this transistor.

The SOT23F package is compatible with the industry standard SOT23 footprint but offers lower profile and higher dissipation for applications where power density is of utmost importance.

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Key Features

  • BVCEO > 20V.
  • IC = 6.5A Continuous Collector Current.
  • Very Low Saturation Voltage VCE(sat) < 30mV @ 1A.
  • RCE(sat) = 18mΩ.
  • High hFE Min 260 @ 2A.
  • 1.5W Power Dissipation.
  • High Forward Blocking Voltage.
  • Complementary PNP Type: ZXTP19020DFF.
  • Totally Lead-Free & Fully RoHS Compliant (Notes 1 and 2).
  • Halogen and Antimony Free. “Green” Device (Note 3).
  • Qualified to AEC-Q101 Standards for High Reliability.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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ZXTN19020DFF 20V NPN HIGH GAIN POWER TRANSISTOR Features  BVCEO > 20V  IC = 6.5A Continuous Collector Current  Very Low Saturation Voltage VCE(sat) < 30mV @ 1A  RCE(sat) = 18mΩ  High hFE Min 260 @ 2A  1.5W Power Dissipation  High Forward Blocking Voltage  Complementary PNP Type: ZXTP19020DFF  Totally Lead-Free & Fully RoHS Compliant (Notes 1 and 2)  Halogen and Antimony Free. “Green” Device (Note 3)  Qualified to AEC-Q101 Standards for High Reliability Description Advanced process capability has been used to maximize the performance of this transistor. The SOT23F package is compatible with the industry standard SOT23 footprint but offers lower profile and higher dissipation for applications where power density is of utmost importance.