Datasheet Summary
Replaces DS6303-1
TRENCH
Gen5 TMOS
Half Bridge IGBT Module
DS6303-2 February 2020 (LN39622)
Features
- Trench Gate IGBT
- Cu Base with Al2O3 Substrates
- High Thermal Cycling Capability
- 10µs Short Circuit Withstand
- High Current Density
APPLICATIONS
- Motor Drives
- High Power Converters
- Renewable Energy Power Conversion
- High Reliability Inverters
The Powerline range of high power modules includes half bridge, chopper, dual, single and bi-directional switch configurations covering voltages from 1200V to 6500V and currents up to 2400A.
The DIM650H2HS17-PA500 is a half bridge 1700V, trench gate, insulated gate bipolar transistor (IGBT) module with enhanced field...