Datasheet Details
| Part number | DS1258Y |
|---|---|
| Manufacturer | Dallas Semiconducotr |
| File Size | 366.12 KB |
| Description | 128k x 16 Nonvolatile SRAM |
| Datasheet |
 DS1258Y Datasheet
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General Description
A0 to A16 DQ0 to DQ15
CEU CEL WE OE
VCC GND
- Address Inputs - Data In/Data Out - Chip Enable Upper Byte - Chip Enable Lower Byte - Write Enable - Output Enable - Power (+5V) - Ground
DESCRIPTION
The DS1258 128k x 16 nonvolatile (NV) SRAMs are 2,097,152-bit fully static, NV SRAMs, organized as 13
Key Features
- 10-Year Minimum Data Retention in the Absence of External Power Data is Automatically Protected During a Power Loss Separate Upper Byte and Lower Byte ChipSelect Inputs Unlimited Write Cycles Low-Power CMOS Read and Write Access Times as Fast as 70ns Lithium Energy Source is Electrically Disconnected to Retain Freshness Until Power is Applied for the First Time Full ±10% Operating Range (DS1258Y) Optional ±5% Operating Range (DS1258AB).