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DP8205C - N-Channel MOSFET

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DP8205C Product details

Description

Dual N-Channel Enhancement Power MOSFET Product Summary Rev1.0 DP8205 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.This device is suitable for use as a Battery protection or in other Switching application.VDS ID (at VGS=4.5V) RDS(ON) (at VGS = 4.5V) RDS(ON) (at VGS = 2.5V) 16 V 5.0A < 29mΩ < 34mΩ SOT23-6 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Drain-Source Voltage Gate-Source Vol

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