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MFE122 - DUAL GATE MOSFETS

Download the MFE122 datasheet PDF. This datasheet also covers the MFE120 variant, as both devices belong to the same dual gate mosfets family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.
  • Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (MFE120-DigitronSemiconductors.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number MFE122
Manufacturer Digitron Semiconductors
File Size 3.32 MB
Description DUAL GATE MOSFETS
Datasheet download datasheet MFE122 Datasheet

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Other Datasheets by Digitron Semiconductors

Part Number Description
MFE120 DUAL GATE MOSFETS
MFE121 DUAL GATE MOSFETS
MFE140 DUAL GATE MOSFET
MFE211 DUAL GATE MOSFETS
MFE212 DUAL GATE MOSFETS

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
MFE120-MFE122 High-reliability discrete products and engineering services since 1977 DUAL GATE MOSFETS FEATURES  Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.  Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix. MAXIMUM RATINGS. Rating Drain Source Voltage Drain Current Total Power Dissipation @ TA = 25°C Derate above 25°C Operating and Storage Temperature Range Symbol VDS ID PD TJ, Tstg Value 25 30 300 1.7 -65 to +175 Unit Vdc mAdc mW mW/°C °C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristics OFF CHARACTERISTICS Drain Source Breakdown Voltage (ID = 100 µAdc, VS = 0, VG1S = -4.0 Vdc, VG2S = 4.