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P-Channel 100 V (D-S) MOSFET
DTM6917
www.din-tek.jp
PRODUCT SUMMARY
VDS (V) - 100
RDS(on) () Max. 0.195 at VGS = - 10 V 0.200 at VGS = - 7.5 V
0.207 at VGS = - 6 V
ID (A) - 5.8 - 5.7 - 5.6
Qg (Typ.) 12
S1 S2 S3 G4
SO-8
Top View
8D 7D 6D 5D
FEATURES • Halogen-free According to IEC 61249-2-21
Definition • TrenchFET® Power MOSFET • 100 % Rg and UIS Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • DC/DC Converters • Motor Control
S
G
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current (TJ = 150 °C)
TC = 25 °C TC = 70 °C
ID
Pulsed Drain Current
IDM
Avalanche Current
IAS
Single Avalanche Energya
L = 0.