Datasheet Summary
DTP4N6/DTP4N6F/DTU4N6/DTL4N6
.din-tek.jp
Power MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration
650 VGS = 10 V
48 12 19 Single
Features
- Low Gate Charge Qg Results in Simple Drive Requirement
- Improved Gate, Avalanche and Dynamic dV/dt Ruggedness
Available
RoHS-
PLIANT
- Fully Characterized Capacitance and Avalanche Voltage and Current
- pliant to RoHS directive 2002/95/EC
TO-220AB
TO-220 FULLPAK
TO-252
TO-251
GD S Top View
GDS Top View
GDS Top View
GDS Top View
S N-Channel...