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D56/
www.daysemi.jp
N-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V) 30 RDS(on) (Ω) 0.0041 at VGS = 10 V 0.0059 at VGS = 4.5 V ID (A)a, g 60g 60g Qg (Typ.) 34 nC
FEATURES
• Halogen-free • TrenchFET® Gen III Power MOSFET • 100 % Rg Tested • 100 % Avalanche Tested
RoHS
COMPLIANT
APPLICATIONS
D
TO-252
• Low-Side Switch for DC/DC Converters - Servers - POL - VRM • OR-ing
G
G
D
S
S N-Channel MOSFET
Top View
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter Drain-Source Voltage Gate-Source Voltage TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C TC = 25 °C TA = 25 °C L = 0.1 mH TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Symbol VDS VGS ID Limit 30 ± 20 60g 60g 36b, c 29b, c 80 60g 4.9b, c 50 125 83 53 5.4b, c 3.