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N-Channel 60-V (D-S) MOSFET
DTU35N06
www.din-tek.jp
PRODUCT SUMMARY
VDS (V)
60
rDS(on) (W)
0.033@ VGS = 10 V
TO-252
GDS Top View
ID (A)
35
FEATURES D TrenchFETr Power MOSFET D 175_C Maximum Junction Temperature D 100% Rg Tested
D
G
S N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Limit
Drain-Source Voltage Gate-Source Voltage
Continuous Drain Current (TJ = 175_C)b Pulsed Drain Current Continuous Source Current (Diode Conduction) Avalanche Current Repetitive Avalanche Energy (Duty Cycle v 1%)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
TC = 25_C TC = 125_C
L = 0.
DTU35N06 Datasheet
