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Din-Tek

DTU3708 Datasheet Preview

DTU3708 Datasheet

N- and P-Channel MOSFET

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N- and P-Channel 30 V (D-S) MOSFET
DTU3708
www.din-tek.jp
PRODUCT SUMMARY
N-Channel
P-Channel
VDS (V)
30
- 30
RDS(on) (Ω)
0.014 at VGS = 10 V
0.018 at VGS = 4.5 V
0.027at VGS = - 10 V
0.035 at VGS = - 4.5 V
ID (A)a Qg (Typ.)
26
22
20.2
- 21
- 19
15.1
TO-252-4L
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
TrenchFET® Power MOSFET
100 % Rg and UIS Tested
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
Inverter
D1
D2
G1 G2
S1
N-Channel MOSFET
S2
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
N-Channel
P-Channel
Drain-Source Voltage
VDS 30
- 30
Gate-Source Voltage
TC = 25 °C
VGS
± 20
26
± 20
- 21
Continuous Drain Current (TJ = 150 °C)
TC = 70 °C
TA = 25 °C
ID
22
8.0b, c
- 18
- 7.2b, c
Pulsed Drain Current (10 µs Pulse Width)
Source-Drain Current Diode Current
Pulsed Source-Drain Current
TA = 70 °C
TC = 25 °C
TA = 25 °C
IDM
IS
ISM
6.2b, c
78
26
21b, c
78
- 5.8b, c
-63
- 21
- 19b, c
- 60
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
L = 0.1 mH
IAS
EAS
10
5
- 20
20
TC = 25 °C
31 25
Maximum Power Dissipation
TC = 70 °C
TA = 25 °C
PD
13
9b, c
9
8b, c
TA = 70 °C
7.28b, c
6.59b, c
Operating Junction and Storage Temperature Range
TJ, Tstg
- 55 to 150
Unit
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
N-Channel
Parameter
Symbol
Typ. Max.
Maximum Junction-to-Ambientb, d
t 10 s
RthJA
50 62.5
Maximum Junction-to-Foot (Drain)
Steady State
RthJF
30 40
Notes:
a. Based on TC = 25 °C.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under Steady State conditions is 120 °C/W (N-Channel) and 110 °C/W (P-Channel).
P-Channel
Typ. Max.
47 62.5
29 38
Unit
°C/W
1




Din-Tek

DTU3708 Datasheet Preview

DTU3708 Datasheet

N- and P-Channel MOSFET

No Preview Available !

DTU3708
www.din-tek.jp
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
VGS(th) Temperature Coefficient
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Currentb
Drain-Source On-State Resistanceb
Forward Transconductanceb
Dynamica
VDS
ΔVDS/TJ
ΔVGS(th)/TJ
VGS(th)
IGSS
IDSS
ID(on)
RDS(on)
gfs
VGS = 0 V, ID = 250 µA
VGS = 0 V, ID = - 250 µA
ID = 250 µA
ID = - 250 µA
ID = 250 µA
ID = - 250 µA
VDS = VGS, ID = 250 µA
VDS = VGS, ID = - 250 µA
VDS = 0 V, VGS = ± 20 V
VDS = 0 V, VGS = ± 20 V
VDS = 30 V,VGS = 0 V
VDS = - 30 V,VGS = 0 V
VDS = 30 V,VGS = 0 V,TJ = 55
VDS = -30 V,VGS = 0 V,TJ = 55
VDS = 5 V, VGS = 10 V
VDS = - 5 V, VGS = - 10 V
VGS = 10 V, ID = 8 A
VGS = - 10 V, ID = - 8 A
VGS = 4.5 V, ID = 5 A
VGS = - 4.5 V, ID = - 5 A
VDS = 15 V, ID = 8 A
VDS = - 15 V, ID = - 8 A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Ciss
Coss
Crss
N-Channel
VDS = 20 V, VGS = 0 V, f = 1 MHz
P-Channel
VDS = - 20 V, VGS = 0 V, f = 1 MHz
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDS = 20 V, VGS = 10 V, ID = 10 A
Qg VDS = - 20 V, VGS = - 10 V, ID = - 10 A
N-Channel
VDS = 20 V, VGS = 4.5 V, ID = 10 A
Qgs
P-Channel
Qgd VDS = - 20 V, VGS = - 4.5 V, ID = - 10 A
Gate Resistance
Rg f = 1 MHz
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
Min.
30
- 30
1.0
- 1.0
26
- 21
0.3
1.3
Typ.a Max. Unit
V
40
- 40
- 4.1
5.0
mV/°C
3.0
- 3.0
± 100
± 100
1
-1
10
- 10
V
nA
µA
0.014 0.0185
0.027
0.018
0.035
0.040
0.022
0.046
27
25
A
Ω
S
546
750
110
223
45
192
19.5 30
36.5 53
20.2 30
15.1 27
2.5
5.1
2.3
9.5
1.5 3.0
6.4 12.8
pF
nC
Ω
2


Part Number DTU3708
Description N- and P-Channel MOSFET
Maker Din-Tek
Total Page 13 Pages
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