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DGD1003 - HALF-BRIDGE GATE DRIVER

General Description

The DGD1003 is a high-voltage / high-speed gate driver capable of driving N-channel MOSFETs and IGBTs in a half-bridge configuration.

High voltage processing techniques enable the DGD1003’s high side to switch to 150V in a bootstrap operation.

Key Features

  • high pulse current buffers designed for minimum driver cross conduction. The DGD1003 has a fixed internal deadtime of 420ns (typical). The DGD1003 is offered in the V-DFN3035-8 package and operates over an extended -40°C to +125°C temperature range.

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Description The DGD1003 is a high-voltage / high-speed gate driver capable of driving N-channel MOSFETs and IGBTs in a half-bridge configuration. High voltage processing techniques enable the DGD1003’s high side to switch to 150V in a bootstrap operation. The DGD1003 logic inputs are compatible with standard TTL and CMOS levels (down to 3.3V) to interface easily with controlling devices. The driver output features high pulse current buffers designed for minimum driver cross conduction. The DGD1003 has a fixed internal deadtime of 420ns (typical). The DGD1003 is offered in the V-DFN3035-8 package and operates over an extended -40°C to +125°C temperature range.