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DGD2012 - HIGH-SIDE AND LOW-SIDE GATE DRIVER

General Description

The DGD2012 is a mid-voltage / high-speed gate driver capable of driving N-Channel MOSFETs in a half-bridge configuration.

Highvoltage processing techniques enable the DGD2012’s high-side to switch to 200V in a bootstrap operation.

Key Features

  • Floating High-Side Driver in Bootstrap Operation to 200V.
  • Drives Two N-Channel MOSFETs in Half Bridge Configuration.
  • 1.9A Source / 2.3A Sink Output Current Capability.
  • Outputs Tolerant to Negative Transients.
  • Wide Low-Side Gate Driver Supply Voltage: 10V to 20V.
  • Logic Input (HIN and LIN) 3.3V Capability.
  • Schmitt.

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Description The DGD2012 is a mid-voltage / high-speed gate driver capable of driving N-Channel MOSFETs in a half-bridge configuration. Highvoltage processing techniques enable the DGD2012’s high-side to switch to 200V in a bootstrap operation. The DGD2012 logic inputs are compatible with standard TTL and CMOS levels (down to 3.3V) to interface easily with controlling devices. The driver outputs feature high pulse current buffers designed for minimum driver cross conduction. The DGD2012 is available in a space saving SO-8 package and operates over an extended -40°C to +125°C temperature range. DGD2012 HIGH-SIDE AND LOW-SIDE GATE DRIVER IN SO-8 Features • Floating High-Side Driver in Bootstrap Operation to 200V • Drives Two N-Channel MOSFETs in Half Bridge Configuration • 1.9A Source / 2.