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DGD2101M Description

The DGD2101M is a high-voltage / high-speed gate driver capable of driving N-Channel MOSFETs and IGBTs in a high-side/low-side configuration. High-voltage processing techniques enable the DGD2101M’s high side to switch to 600V in a bootstrap operation. The 50ns (max) propagation delay matching between the high and the low side drivers allows high frequency switching.

DGD2101M Key Features

  • Floating High-side Driver in Bootstrap Operation to 600V
  • Drives Two N-Channel MOSFETs or IGBTs in High-side / Low
  • Outputs Tolerant to Negative Transients
  • Wide Low-side Gate Driver and Logic Supply: 10V to 20V