Description
The DGD2103M is a high-voltage / high-speed gate driver capable of driving N-channel MOSFETs and IGBTs in a half-bridge configuration.
Features
- high pulse current buffers designed for minimum driver cross conduction. DGD2103M has a fixed internal deadtime of 420ns (typical). The DGD2103M is offered in the SO-8 (Type TH) package and operates over an extended -40°C to +125°C temperature range. DGD2103M
HALF-BRIDGE GATE DRIVER IN SO-8
Features.
- Floating High-Side Driver in Bootstrap Operation to 600V.
- Drives Two N-channel MOSFETs or IGBTs in a Half-Bridge
Configuration.
- Designed for enhanced performance in noisy motor appli.
DGD2103M-Diodes.pdf
