DMG4710SSS Datasheet | Diodes Incorporated

N-CHANNEL ENHANCEMENT MODE MOSFET WITH SCHOTTKY DIODE Product Summary V(BR)DSS 30V RDS(on) 12.5mΩ @ VGS= 10V 14.8mΩ @ VGS= 4.5V ID max TA = 25°C (Note 5) 11.7A 10.8A Description and Applications This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. - DC-DC Converters - Power management functions Features - DIOFET utilizes a unique patented process to monolithically integrate a MOSFET and a Schottky in a single die to deliver: - Low RDS(ON) - minimizes conduction losses - Low VSD - reducing the losses due to body diode conduction - Low Qrr - lower Qrr of the integrated Schottky reduces body diode switching losses - Low gate capacitance (Qg/Qgs) ratio - reduces risk of shootthrough or cross conduction currents at high frequencies - Avalanche rugged - IAR and EAR rated - Lead Free, Ro HS pliant...