DMN1054UCB4
DMN1054UCB4 is N-CHANNEL MOSFET manufactured by Diodes Incorporated.
Product Summary (Typ. @ VGS = 4.5V, TA = +25°C)
VDSS 8V
RDS(ON) 35mΩ
Qg 9.6n C
Qgd 0.9n C
ID 4.0A
Description
The DMN1054UCB4 is a Trench MOSFET, engineered to minimize on-state losses and switch ultra-fast, making it ideal for high-efficiency power transfer. Using Chip-Scale Package (CSP) to increase power density by bining low thermal impedance with minimal RDS(ON) per footprint area.
Applications
- DC-DC Converters
- Battery Management
- Load Switch
X1-WLB0808-4
N-CHANNEL ENHANCEMENT MODE MOSFET
Features
- Trench-CSP Technology with the Lowest on Resistance:
- RDS(ON) = 35mΩ to Minimize On-State Losses
- Qg = 9.6n C for Ultra-Fast Switching
- VGS(TH) = 0.6V Typ. for a Low Turn-On Potential
- CSP with Footprint 0.8mm × 0.8mm
- Height = 0.375mm for Low Profile
- Totally Lead-Free & Fully Ro HS pliant (Notes 1 & 2)
- Halogen and Antimony Free. “Green” Device (Note 3)
Mechanical Data
- Case: X1-WLB0808-4
- Terminal Connections:...
