DMN1054UCB4 N-CHANNEL MOSFET

Diodes

Description

Product Summary (Typ.@ VGS = 4.5V, TA = +25°C) VDSS 8V RDS(ON) 35mΩ Qg 9.6nC Qgd 0.9nC ID 4.0A .
The DMN1054UCB4 is a Trench MOSFET, engineered to minimize on-state losses and switch ultra-fast, making it ideal for high-efficiency power transfer.

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Datasheet Specifications

Part number: DMN1054UCB4
Manufacturer: DIODES ↗
File Size: 332.98 KB
Datasheet: DMN1054UCB4-Diodes.pdf
Description: N-CHANNEL MOSFET

Features

* Trench-CSP Technology with the Lowest on Resistance:
* RDS(ON) = 35mΩ to Minimize On-State Losses
* Qg = 9.6nC for Ultra-Fast Switching
* VGS(TH) = 0.6V Typ. for a Low Turn-On Potential
* CSP with Footprint 0.8mm × 0.8mm
* Height = 0.375mm for Low Profile
* Totally Lead

Applications

* DC-DC Converters
* Battery Management

DMN1054UCB4 Distributors

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DMN1054UCB4 N-CHANNEL MOSFET Diodes

Diodes DMN1054UCB4-like datasheet