DMN1054UCB4 Datasheet - Diodes

N-CHANNEL MOSFET

DMN1054UCB4 Features

* Trench-CSP Technology with the Lowest on Resistance:

* RDS(ON) = 35mΩ to Minimize On-State Losses

* Qg = 9.6nC for Ultra-Fast Switching

* VGS(TH) = 0.6V Typ. for a Low Turn-On Potential

* CSP with Footprint 0.8mm × 0.8mm

* Height = 0.375mm for Low Profile

* Totally Lead

DMN1054UCB4 General Description

The DMN1054UCB4 is a Trench MOSFET, engineered to minimize on-state losses and switch ultra-fast, making it ideal for high-efficiency power transfer. Using Chip-Scale Package (CSP) to increase power density by combining low thermal impedance with minimal RDS(ON) per footprint area. Applications .

DMN1054UCB4 Datasheet (332.98 KB)