DMN10H170SVTQ
DMN10H170SVTQ is 100V N-CHANNEL MOSFET manufactured by Diodes Incorporated.
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Product Summary
BVDSS 100V
RDS(ON) Max
160mΩ @ VGS = 10V 200mΩ @ VGS = 4.5V
ID Max TA = +25°C
2.6A
2.3A
Description
This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for high-efficiency power management applications.
Applications
- Power Management Functions
- Battery Operated Systems and Solid-State Relays
- Drivers: Relays, Solenoids, Lamps, Hammers, Displays,
Memories, Transistors, etc.
100V N-CHANNEL ENHANCEMENT MODE MOSFET
Features and Benefits
- Low Gate Threshold Voltage
- Low Input Capacitance
- Fast Switching Speed
- Totally Lead-Free & Fully Ro HS pliant (Notes 1 & 2)
- Halogen and Antimony Free. “Green” Device (Note 3)
- Qualified to AEC-Q101 Standards for High Reliability
- PPAP Capable (Note 4)
Mechanical Data
- Case: TSOT26
- Case Material: Molded Plastic, “Green” Molding pound.
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