DMN1150UFL3 DUAL N-CHANNEL MOSFET

Diodes

Description

Product Summary Device BVDSS N-Channel 12V RDS(ON) Max 150mΩ @ VGS = 4.5V 185mΩ @ VGS = 2.5V ID Max TA = +25°C 2.0A 1.8A .
and Applications This MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal f.

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Datasheet Specifications

Part number: DMN1150UFL3
Manufacturer: DIODES ↗
File Size: 581.71 KB
Datasheet: DMN1150UFL3-Diodes.pdf
Description: DUAL N-CHANNEL MOSFET

Features

* Footprint of just 1.3 mm2
* Ultra-Low Profile Package
* 0.35mm Profile
* Low Gate Threshold Voltage
* Fast Switching Speed
* Ultra-Small Surface Mount Package
* ESD Protected Gate
* Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
* Halogen and Antimon

Applications

* This MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for high efficiency power management applications.
* Motor Control
* Power Management Functions
* Backlighting X2-DFN1310-6 (Type B) D1 DMN1150UFL3 DUAL

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DMN1150UFL3 DUAL N-CHANNEL MOSFET Diodes

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