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DMN1150UFL3 - DUAL N-CHANNEL MOSFET

Description

This MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for high efficiency power management applications.

Motor Control Power Management Functions Backlighting X2-DFN1310-6 (Type B) D1

Features

  • Footprint of just 1.3 mm2.
  • Ultra-Low Profile Package.
  • 0.35mm Profile.
  • Low Gate Threshold Voltage.
  • Fast Switching Speed.
  • Ultra-Small Surface Mount Package.
  • ESD Protected Gate.
  • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2).
  • Halogen and Antimony Free. “Green” Device (Note 3).
  • Qualified to AEC-Q101 Standards for High Reliability Mechanical Data.
  • Case: X2-DFN1310-6 (Type B).
  • Case Material: Molded Plastic, “Green” Molding Compo.

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Full PDF Text Transcription

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Product Summary Device BVDSS N-Channel 12V RDS(ON) Max 150mΩ @ VGS = 4.5V 185mΩ @ VGS = 2.5V ID Max TA = +25°C 2.0A 1.8A Description and Applications This MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for high efficiency power management applications.  Motor Control  Power Management Functions  Backlighting X2-DFN1310-6 (Type B) D1 DMN1150UFL3 DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Features and Benefits  Footprint of just 1.3 mm2  Ultra-Low Profile Package – 0.35mm Profile  Low Gate Threshold Voltage  Fast Switching Speed  Ultra-Small Surface Mount Package  ESD Protected Gate  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free.
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