DMN1150UFB Datasheet | Diodes Incorporated

A D VNAENWC EP IRNOFDOURCMTA T I O N N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS 12V RDS(on) max 0.15Ω @ VGS = 4.5V 0.185Ω @ VGS = 2.5V 0.21Ω @ VGS = 1.8V ID TA = +25°C 1.41A 1.25A 1.16A Description This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Applications - DC-DC Converters - Power management functions Features - Low On-Resistance - Very Low Gate Threshold Voltage VGS(TH), 1.0V max - Low Input Capacitance - Fast Switching Speed - ESD Protected Gate - Totally Lead-Free & Fully RoHS pliant (Notes...