DMN1150UFL3 Datasheet DUAL N-CHANNEL MOSFET

Manufacturer: Diodes Incorporated

Overview: Product Summary Device BVDSS N-Channel 12V RDS(ON) Max 150mΩ @ VGS = 4.5V 185mΩ @ VGS = 2.5V ID Max TA = +25°C 2.0A 1.

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Datasheet Details

Part number	DMN1150UFL3
Manufacturer	Diodes Incorporated
File Size	581.71 KB
Description	DUAL N-CHANNEL MOSFET
Download	DMN1150UFL3 Download (PDF)

General Description

and Applications This MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for high efficiency power management applications.

 Motor Control  Power Management Functions  Backlighting X2-DFN1310-6 (Type B) D1 DMN1150UFL3 DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

Key Features

Footprint of just 1.3 mm2.
Ultra-Low Profile Package.
0.35mm Profile.
Low Gate Threshold Voltage.
Fast Switching Speed.
Ultra-Small Surface Mount Package.
ESD Protected Gate.
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2).
Halogen and Antimony Free. “Green” Device (Note 3).
Qualified to AEC-Q101 Standards for High Reliability Mechanical Data.
Case: X2-DFN1310-6 (Type B).
Case Material: Molded Plastic, “Green” Molding Compo.

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