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DMN2008LFU - DUAL N-CHANNEL MOSFET

Description

This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) , yet maintain superior switching performance, making it ideal for high efficiency power management applications.

Power Management Functions Battery Pack Load Switch DMN2008LFU DUAL N

Features

  • Low On-Resistance.
  • Low Gate Threshold Voltage.
  • Low Input Capacitance.
  • Fast Switching Speed.
  • ESD Protected Gate.
  • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2).
  • Halogen and Antimony Free. “Green” Device (Note 3) Mechanical Data.
  • Case: U-DFN2030-6 (Type B).
  • Case Material: Molded Plastic, ―Green‖ Molding Compound. UL Flammability Classification Rating 94V-0.
  • Moisture Sensitivity: Level 1 per J-STD-020.
  • Termina.

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Full PDF Text Transcription

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Product Summary BVDSS 20V RDS(ON) Max 5.4mΩ @ VGS = 4.5V 6.2mΩ @ VGS = 4.0V 6.4mΩ @ VGS = 3.7V 7.5mΩ @ VGS = 3.1V 9.6mΩ @ VGS = 2.5V ID TA = +25°C 14.5A 13.5A 13.0A 12.0A 10.5A Description This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) , yet maintain superior switching performance, making it ideal for high efficiency power management applications. Applications  Power Management Functions  Battery Pack  Load Switch DMN2008LFU DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Features  Low On-Resistance  Low Gate Threshold Voltage  Low Input Capacitance  Fast Switching Speed  ESD Protected Gate  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free.
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