DMN2008LFU
DMN2008LFU is DUAL N-CHANNEL MOSFET manufactured by Diodes Incorporated.
Product Summary
BVDSS 20V
RDS(ON) Max
5.4mΩ @ VGS = 4.5V 6.2mΩ @ VGS = 4.0V 6.4mΩ @ VGS = 3.7V 7.5mΩ @ VGS = 3.1V 9.6mΩ @ VGS = 2.5V
ID TA = +25°C
14.5A 13.5A 13.0A 12.0A 10.5A
Description
This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) , yet maintain superior switching performance, making it ideal for high efficiency power management applications.
Applications
- Power Management Functions
- Battery Pack
- Load Switch
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
Features
- Low On-Resistance
- Low Gate Threshold Voltage
- Low Input Capacitance
- Fast Switching Speed
- ESD Protected Gate
- Totally Lead-Free & Fully Ro HS pliant (Notes 1 & 2)
- Halogen and Antimony Free. “Green” Device (Note 3)
Mechanical Data
- Case: U-DFN2030-6 (Type B)
- Case Material: Molded Plastic, ―Green‖ Molding pound.
UL Flammability Classification Rating 94V-0
- Moisture Sensitivity: Level 1 per J-STD-020
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