DMN2008LFU DUAL N-CHANNEL MOSFET

Diodes

Description

Product Summary BVDSS 20V RDS(ON) Max 5.4mΩ @ VGS = 4.5V 6.2mΩ @ VGS = 4.0V 6.4mΩ @ VGS = 3.7V 7.5mΩ @ VGS = 3.1V 9.6mΩ @ VGS = 2.5V ID TA = +25°C .
This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) , yet maintain superior switching performance, making it ideal fo.

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Datasheet Specifications

Part number: DMN2008LFU
Manufacturer: DIODES ↗
File Size: 313.49 KB
Datasheet: DMN2008LFU-Diodes.pdf
Description: DUAL N-CHANNEL MOSFET

Features

* Low On-Resistance
* Low Gate Threshold Voltage
* Low Input Capacitance
* Fast Switching Speed
* ESD Protected Gate
* Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
* Halogen and Antimony Free. “Green” Device (Note 3) Mechanical Data
* Case: U-DFN2030-6 (Type

Applications

* Applications
* Power Management Functions
* Battery Pack

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DMN2008LFU DUAL N-CHANNEL MOSFET Diodes

Diodes DMN2008LFU-like datasheet