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DMN2004TK - N-Channel MOSFET

Key Features

  • Low On-Resistance.
  • Low Gate Threshold Voltage.
  • Low Input Capacitance.
  • Fast Switching Speed.
  • Low Input/Output Leakage.
  • ESD Protected up to 2kV.
  • Lead Free By Design/RoHS Compliant (Note 1).
  • "Green" Device (Note 2).
  • Qualified to AEC-Q101 standards for High Reliability SOT-523 ESD.

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NEW PRODUCT Features • Low On-Resistance • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • ESD Protected up to 2kV • Lead Free By Design/RoHS Compliant (Note 1) • "Green" Device (Note 2) • Qualified to AEC-Q101 standards for High Reliability SOT-523 ESD PROTECTED TO 2kV Top View DMN2004TK N-CHANNEL ENHANCEMENT MODE MOSFET Mechanical Data • Case: SOT-523 • Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 • Moisture Sensitivity: Level 1 per J-STD-020 • Terminals: Finish ⎯ Matte Tin annealed over Alloy 42 leadframe. Solderable per MIL-STD-202, Method 208 • Terminal Connections: See Diagram • Weight: 0.