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DMN2005K - N-Channel Transistor

Key Features

  • Low On-Resistance.
  • Very Low Gate Threshold Voltage, 0.9V Max.
  • Fast Switching Speed.
  • Low Input/Output Leakage.
  • Ultra-Small Surface Mount Package.
  • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2).
  • Halogen and Antimony Free. “Green” Device (Note 3).
  • ESD Protected Gate.
  • For automotive.

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Full PDF Text Transcription (Reference)

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DMN2005K N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features  Low On-Resistance  Very Low Gate Threshold Voltage, 0.9V Max.  Fast Switching Speed  Low Input/Output Leakage  Ultra-Small Surface Mount Package  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  ESD Protected Gate  For automotive applications requiring specific change control (i.e. parts qualified to AEC-Q100/101/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please contact us or your local Diodes representative. https://www.diodes.com/quality/product-definitions/ Mechanical Data  Case: SOT23  Case Material: Molded Plastic, “Green” Molding Compound.