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DMN2005UFG - N-Channel MOSFET

General Description

This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications.

Backlighting Power Management Functions DC-DC Converters S Pin 1 S S G PowerDI33

Key Features

  • Low RDS(ON).
  • ensures on state losses are minimized.
  • Small form factor thermally efficient package enables higher density end products.
  • Occupies just 33% of the board area occupied by SO-8 enabling smaller end product.
  • 100% UIS & Rg tested.
  • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2).
  • Halogen and Antimony Free. “Green” Device (Note 3).
  • Qualified to AEC-Q101 Standards for High Reliability.
  • An Automotive-Compliant Part is Available Under.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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ADVANACDEVDA INNCFEOIRNMFAOTRIMOANTION DMN2005UFG 20V N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI3333-8 Product Summary BVDSS 20V RDS(ON) Max 4.6m @ VGS = 4.5V 8.7m @ VGS = 2.5V ID Max TC = +25°C (Note 9) 50A 36A Description This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications.