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DMN2004DWK Datasheet Dual N-channel Enhancement Mode MOSFET

Manufacturer: Diodes Incorporated

Overview: NEW PRODUCT Product Summary V(BR)DSS 20V RDS(on) max 0.55Ω @ VGS = 4.

General Description

This MOSFET is designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications.

Applications  Load Switch DMN2004DWK DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

Key Features

  • Dual N-Channel MOSFET.
  • Low On-Resistance.
  • Low Gate Threshold Voltage.
  • Low Input Capacitance.
  • Fast Switching Speed.
  • Low Input/Output Leakage.
  • Ultra-Small Surface Mount Package.
  • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2).
  • Halogen and Antimony Free. “Green” Device (Note 3).
  • Qualified to AEC-Q101 Standards for High Reliability Mechanical Data.
  • Case: SOT363.
  • Case Material: Molded Plastic, “Green” Molding Compound. UL Flammabilit.

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