DMN2004K Datasheet N-channel Enhancement Mode MOSFET

Manufacturer: Diodes Incorporated

Overview: DMN2004K N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS 20V RDS(on) 0.55Ω @ VGS = 4.5V 0.9Ω @ VGS = 1.

Datasheet Details

Part number	DMN2004K
Manufacturer	Diodes Incorporated
File Size	308.10 KB
Description	N-CHANNEL ENHANCEMENT MODE MOSFET
Datasheet	DMN2004K_DiodesIncorporated.pdf

General Description

This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on)) yet maintain superior switching performance, making it ideal for high-efficiency power-management applications.

Key Features

Low On-Resistance: RDS(on) = 550mΩ (max) @ VGS = 4.5V.
Low Gate Threshold Voltage.
Low Input Capacitance.
Fast Switching Speed.
Low Input/Output Leakage.
ESD Protected up to 2kV.
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2).
Halogen and Antimony Free. “Green” Device (Note 3).
For automotive.

DMN2004K Distributor

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