Datasheet Summary
N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
BVDSS 20V
RDS(on) 0.55Ω @ VGS = 4.5V 0.9Ω @ VGS = 1.8V
ID TA = +25°C
630mA
410mA
Description
This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on)) yet maintain superior switching performance, making it ideal for high-efficiency power-management applications.
Features and Benefits
- Low On-Resistance: RDS(on) = 550mΩ (max) @ VGS = 4.5V
- Low Gate Threshold Voltage
- Low Input Capacitance
- Fast Switching Speed
- Low Input/Output Leakage
- ESD Protected up to 2kV
- Totally Lead-Free & Fully RoHS pliant (Notes 1 & 2)
- Halogen and Antimony Free. “Green” Device (Note 3)
- For automotive...
