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DMN2004WKQ - N-Channel MOSFET

General Description

This MOSFET is designed to meet the stringent requirements of Automotive applications.

Engine Management Systems DC-DC Converters Body Control Electronics

Key Features

  • Low On-Resistance: RDS(ON).
  • Low Gate Threshold Voltage.
  • Low Input Capacitance.
  • Fast Switching Speed.
  • Low Input/Output Leakage.
  • ESD Protected.
  • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2).
  • Halogen and Antimony Free. “Green” Device (Note 3).
  • Qualified to AEC-Q101 standards for High Reliability.
  • PPAP Capable (Note 4) Mechanical Data.
  • Case: SOT-323.
  • Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classifi.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DMN2004WKQ N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS 20V RDS(ON) max 550 mΩ @ VGS = 4.5V ID TC = +25°C 0.54 mA Description and Applications This MOSFET is designed to meet the stringent requirements of Automotive applications. It is qualified to AEC-Q101, supported by a PPAP and is ideal for use in:  Engine Management Systems  DC-DC Converters  Body Control Electronics Features and Benefits  Low On-Resistance: RDS(ON)  Low Gate Threshold Voltage  Low Input Capacitance  Fast Switching Speed  Low Input/Output Leakage  ESD Protected  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free.