Datasheet4U Logo Datasheet4U.com

DMN2005LP4K - N-Channel Transistor

Key Features

  • Low On-Resistance Very Low Gate Threshold Voltage, 0.9V Max. Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package Lead Free By Design/RoHS Compliant (Note 2) "Green" Device (Note 4) ESD Protected Gate Ultra Low Profile Package DFN1006H4-3 Dim ESD protected A B S D G Min 0.95 0.55 0.45 0.20.
  • 0 0.10 0.20.
  • Max 1.075 0.675 0.55 0.30 0.40 0.05 0.20 0.30.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
DMN2005DLP4K Dual N-Channel MOSFET Diodes
DMN2005UFG N-Channel MOSFET Diodes
DMN2005UFGQ 20V N-CHANNEL MOSFET DIODES
DMN2005UPS N-CHANNEL MOSFET Diodes
DMN2004DMK DUAL N-CHANNEL MOSFET Diodes

Other Datasheets by Diodes Incorporated

Part Number Description
DMN2005LPK N-Channel Transistor
DMN2005K N-Channel Transistor
DMN2004DWK DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
DMN2004K N-CHANNEL ENHANCEMENT MODE MOSFET
DMN2004VK DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
SPICE MODEL: DMN2005LP4K DMN2005LP4K N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR NEW NEW PRODUCT Features • • • • • • • • • Low On-Resistance Very Low Gate Threshold Voltage, 0.9V Max. Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package Lead Free By Design/RoHS Compliant (Note 2) "Green" Device (Note 4) ESD Protected Gate Ultra Low Profile Package DFN1006H4-3 Dim ESD protected A B S D G Min 0.95 0.55 0.45 0.20 — 0 0.10 0.20 — — Max 1.075 0.675 0.55 0.30 0.40 0.05 0.20 0.30 — — Typ 1.00 0.60 0.50 0.25 — 0.02 0.15 0.25 0.35 0.40 C D G H K Mechanical Data • • Case: DFN1006H4-3 Case Material: Molded Plastic, “Green” Molding Compound.