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DMN2050LFDB - Dual N-Channel MOSFET

General Description

This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.

Key Features

  • Low On-Resistance.
  • Low Input Capacitance.
  • Fast Switching Speed.
  • Low Input/Output Leakage.
  • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2).
  • Halogen and Antimony Free. “Green” Device (Note 3).
  • For automotive.

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Full PDF Text Transcription for DMN2050LFDB (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for DMN2050LFDB. For precise diagrams, and layout, please refer to the original PDF.

DMN2050LFDB DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS 20V RDS(ON) max 45mΩ @ VGS = 4.5V 55mΩ @ VGS = 2.5V ID max TA = +25°C 4.5A 4.1A Description This ...

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= 4.5V 55mΩ @ VGS = 2.5V ID max TA = +25°C 4.5A 4.1A Description This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Features and Benefits  Low On-Resistance  Low Input Capacitance  Fast Switching Speed  Low Input/Output Leakage  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  For automotive applications requiring specific change control (i.e.

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