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DMN2065UW - N-Channel MOSFET

General Description

This MOSFET has been designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.

General Purpose Interfacing Switch Power Management Functions

Key Features

  • Low On-Resistance.
  • Low Input Capacitance.
  • Fast Switching Speed.
  • Lead Free By Design/RoHS Compliant (Note 1).
  • "Green" Device (Note 2).
  • Qualified to AEC-Q101 standards for High Reliability.

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Full PDF Text Transcription for DMN2065UW (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for DMN2065UW. For precise diagrams, and layout, please refer to the original PDF.

NEW PRODUCT Product Summary V(BR)DSS 20V RDS(ON) max 56mΩ @ VGS = 4.5V 65mΩ @ VGS = 2.5V 93mΩ @ VGS = 1.8V 140mΩ @ VGS = 1.5V ID max TA = 25°C 2.8A 2.6A 2.2A 1.8A DMN2065...

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= 1.8V 140mΩ @ VGS = 1.5V ID max TA = 25°C 2.8A 2.6A 2.2A 1.8A DMN2065UW 20V N-CHANNEL ENHANCEMENT MODE MOSFET Features and Benefits • Low On-Resistance • Low Input Capacitance • Fast Switching Speed • Lead Free By Design/RoHS Compliant (Note 1) • "Green" Device (Note 2) • Qualified to AEC-Q101 standards for High Reliability Description and Applications This MOSFET has been designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.

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