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DMN2100UDM Datasheet N-channel MOSFET

Manufacturer: Diodes Incorporated

Overview: NEW PRODUCT Product Summary V(BR)DSS 20V RDS(ON) max 55mΩ @ VGS = 4.5V 70mΩ @ VGS = 2.5V 90mΩ @ VGS = 1.8V 130mΩ @ VGS = 1.5V ID max TA = 25°C 4.0A 3.5A 3.1A 2.

General Description

and Applications This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.

• General Purpose Interfacing Switch • Power Management Functions DMN2100UDM N-CHANNEL ENHANCEMENT MODE MOSFET

Key Features

  • Low On-Resistance.
  • Low Gate Threshold Voltage.
  • Low Input Capacitance.
  • Fast Switching Speed.
  • ESD Protected Gate.
  • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2).
  • Halogen and Antimony Free. “Green” Device (Note 3).
  • Qualified to AEC-Q101 Standards for High Reliability Mechanical Data.
  • Case: SOT26.
  • Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0.

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