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DMN2230UQ - N-Channel MOSFET

General Description

This MOSFET is designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications.

General Purpose Interfacing Switch Power Management Functions Boost Application

Key Features

  • Low On-Resistance.
  • Low Gate Threshold Voltage.
  • Low Input Capacitance.
  • Fast Switching Speed.
  • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2).
  • Halogen and Antimony Free. “Green” Device (Note 3).
  • Qualified to AEC-Q101 Standards for High Reliability.
  • PPAP Capable (Note 4).

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Full PDF Text Transcription for DMN2230UQ (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for DMN2230UQ. For precise diagrams, and layout, please refer to the original PDF.

NEW PRODUCT Product Summary BVDSS 20V RDS(ON) max 110mΩ @ VGS = 4.5V 145mΩ @ VGS = 2.5V 230mΩ @ VGS = 1.8V ID max TA = +25°C 2A 1.7A 1.3A DMN2230UQ N-CHANNEL ENHANCEMENT ...

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= 1.8V ID max TA = +25°C 2A 1.7A 1.3A DMN2230UQ N-CHANNEL ENHANCEMENT MODE MOSFET Features  Low On-Resistance  Low Gate Threshold Voltage  Low Input Capacitance  Fast Switching Speed  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  Qualified to AEC-Q101 Standards for High Reliability  PPAP Capable (Note 4) Description and Applications This MOSFET is designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications.

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