DMN2215UDM Description
NEW PRODUCT DMN2215UDM DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR.
DMN2215UDM Key Features
- Dual N-Channel MOSFET
- Low On-Resistance
- 100m @VGS = 4.5V, ID = 2.5A
- 140m @VGS = 2.5V, ID = 1.5A
- 215m @VGS = 1.8V, ID = 0.1A
- Very Low Gate Threshold Voltage
- Low Input Capacitance
- Fast Switching Speed
- ESD Protected Gate to 2kV HBM
- Totally Lead-Free & Fully RoHS pliant (Notes 1 & 2)