DMN2230UQ Datasheet | Diodes Incorporated

NEW PRODUCT Product Summary BVDSS 20V RDS(ON) max 110mΩ @ VGS = 4.5V 145mΩ @ VGS = 2.5V 230mΩ @ VGS = 1.8V ID max TA = +25°C 2A 1.7A 1.3A N-CHANNEL ENHANCEMENT MODE MOSFET Features - Low On-Resistance - Low Gate Threshold Voltage - Low Input Capacitance - Fast Switching Speed - Totally Lead-Free & Fully RoHS pliant (Notes 1 & 2) - Halogen and Antimony Free. “Green” Device (Note 3) - Qualified to AEC-Q101 Standards for High Reliability - PPAP Capable (Note 4) Description and Applications This MOSFET is designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications. -...