Datasheet4U Logo Datasheet4U.com

DMN2230UQ - N-Channel MOSFET

Description

This MOSFET is designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications.

General Purpose Interfacing Switch Power Management Functions Boost Application

Features

  • Low On-Resistance.
  • Low Gate Threshold Voltage.
  • Low Input Capacitance.
  • Fast Switching Speed.
  • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2).
  • Halogen and Antimony Free. “Green” Device (Note 3).
  • Qualified to AEC-Q101 Standards for High Reliability.
  • PPAP Capable (Note 4).

📥 Download Datasheet

Datasheet preview – DMN2230UQ

Datasheet Details

Part number DMN2230UQ
Manufacturer Diodes Incorporated
File Size 356.84 KB
Description N-Channel MOSFET
Datasheet download datasheet DMN2230UQ Datasheet
Additional preview pages of the DMN2230UQ datasheet.

📁 Similar Datasheet

  • DMN2004DWK - DUAL N-CHANNEL ENHANCEMENT MODE MOSFET (Diodes Incorporated)
  • DMN2004K - N-CHANNEL ENHANCEMENT MODE MOSFET (Diodes Incorporated)
  • DMN2004VK - DUAL N-CHANNEL ENHANCEMENT MODE MOSFET (Diodes Incorporated)
  • DMN2004WK - N-Channel MOSFET (Diodes Incorporated)
  • DMN2005K - N-Channel Transistor (Diodes Incorporated)
  • DMN2005LP4K - N-Channel Transistor (Diodes Incorporated)
  • DMN2005LPK - N-Channel Transistor (Diodes Incorporated)
  • DMN2112SN - N-Channel FET (Diodes Incorporated)
  • DMN2114SN - N-Channel Transistor (Diodes Incorporated)
  • DMN21D2UFB - 20V N-CHANNEL MOSFET (Diodes Incorporated)
Other Datasheets by Diodes

Full PDF Text Transcription

Click to expand full text
NEW PRODUCT Product Summary BVDSS 20V RDS(ON) max 110mΩ @ VGS = 4.5V 145mΩ @ VGS = 2.5V 230mΩ @ VGS = 1.8V ID max TA = +25°C 2A 1.7A 1.3A DMN2230UQ N-CHANNEL ENHANCEMENT MODE MOSFET Features  Low On-Resistance  Low Gate Threshold Voltage  Low Input Capacitance  Fast Switching Speed  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  Qualified to AEC-Q101 Standards for High Reliability  PPAP Capable (Note 4) Description and Applications This MOSFET is designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications.
Published: |