DMN2250UFB Datasheet N-channel MOSFET

Manufacturer: Diodes Incorporated

Overview: A D VNAENWC EP IRNOFDOURCMTA T I O N DMN2250UFB N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS 20V RDS(on) max 0.17Ω @ VGS = 4.5V 0.23Ω @ VGS = 2.5V 0.25Ω @ VGS = 1.8V ID TA = +25°C 1.35A 1.15A 1.

Datasheet Details

Part number	DMN2250UFB
Manufacturer	Diodes Incorporated
File Size	235.96 KB
Description	N-Channel MOSFET
Datasheet	DMN2250UFB-Diodes.pdf

General Description

This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.

Applications • DC-DC Converters • Power Management Functions

Key Features

Low On-Resistance.
Very Low Gate Threshold Voltage VGS(TH), 1.0V max.
Low Input Capacitance.
Fast Switching Speed.
ESD Protected Gate.
Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2).
Halogen and Antimony Free. “Green” Device (Note 3).
Qualified to AEC-Q101 Standards for High Reliability Mechanical Data.
Case: X1-DFN1006-3.
Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Cla.

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