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DMN2250UFB - N-Channel MOSFET

Description

This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.

DC-DC Converters Power Management Functions

Features

  • Low On-Resistance.
  • Very Low Gate Threshold Voltage VGS(TH), 1.0V max.
  • Low Input Capacitance.
  • Fast Switching Speed.
  • ESD Protected Gate.
  • Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2).
  • Halogen and Antimony Free. “Green” Device (Note 3).
  • Qualified to AEC-Q101 Standards for High Reliability Mechanical Data.
  • Case: X1-DFN1006-3.
  • Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Cla.

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A D VNAENWC EP IRNOFDOURCMTA T I O N DMN2250UFB N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS 20V RDS(on) max 0.17Ω @ VGS = 4.5V 0.23Ω @ VGS = 2.5V 0.25Ω @ VGS = 1.8V ID TA = +25°C 1.35A 1.15A 1.10A Description This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Applications • DC-DC Converters • Power Management Functions Features • Low On-Resistance • Very Low Gate Threshold Voltage VGS(TH), 1.0V max • Low Input Capacitance • Fast Switching Speed • ESD Protected Gate • Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2) • Halogen and Antimony Free.
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