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DMN2250UFB - N-Channel MOSFET

General Description

This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.

DC-DC Converters Power Management Functions

Key Features

  • Low On-Resistance.
  • Very Low Gate Threshold Voltage VGS(TH), 1.0V max.
  • Low Input Capacitance.
  • Fast Switching Speed.
  • ESD Protected Gate.
  • Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2).
  • Halogen and Antimony Free. “Green” Device (Note 3).
  • Qualified to AEC-Q101 Standards for High Reliability Mechanical Data.
  • Case: X1-DFN1006-3.
  • Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Cla.

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Full PDF Text Transcription for DMN2250UFB (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for DMN2250UFB. For precise diagrams, and layout, please refer to the original PDF.

A D VNAENWC EP IRNOFDOURCMTA T I O N DMN2250UFB N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS 20V RDS(on) max 0.17Ω @ VGS = 4.5V 0.23Ω @ VGS = 2.5V 0.25Ω @ V...

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BR)DSS 20V RDS(on) max 0.17Ω @ VGS = 4.5V 0.23Ω @ VGS = 2.5V 0.25Ω @ VGS = 1.8V ID TA = +25°C 1.35A 1.15A 1.10A Description This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Applications • DC-DC Converters • Power Management Functions Features • Low On-Resistance • Very Low Gate Threshold Voltage VGS(TH), 1.0V max • Low Input Capacitance • Fast Switching Speed • ESD Protected Gate • Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2) • Halogen and Antimony Free.

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