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DMN2710UFB Datasheet N-Channel MOSFET

Manufacturer: Diodes Incorporated

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General Description

and Applications This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, which makes it ideal for high-efficiency power management applications.

 Portable Electronics Mechanical Data  Case: X1-DFN1006-3  Case Material: Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0  Moisture Sensitivity: Level 1 per J-STD-020  Terminals: Finish—NiPdAu Over Copper Leadframe.

Overview

ADVANCED INFORMATION DMN2710UFB N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS 20V RDS(ON) 0.45Ω @ VGS = 4.5V 0.6Ω @ VGS = 2.5V ID TA = +25°C 1.3A 1.

Key Features

  • Footprint of Just 0.6mm2.
  • 13 Times Smaller Than SOT23.
  • Low Gate Threshold Voltage.
  • Fast Switching Speed.
  • ESD Protected Gate.
  • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2).
  • Halogen and Antimony Free. “Green” Device (Note 3).
  • For automotive.

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