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DMN2710UFB - N-Channel MOSFET

Datasheet Summary

Description

This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, which makes it ideal for high-efficiency power management applications.

Portable Electronics Mechanical Data Case: X1-DFN1006-3 Case Material:

Features

  • Footprint of Just 0.6mm2.
  • 13 Times Smaller Than SOT23.
  • Low Gate Threshold Voltage.
  • Fast Switching Speed.
  • ESD Protected Gate.
  • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2).
  • Halogen and Antimony Free. “Green” Device (Note 3).
  • For automotive.

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Datasheet preview – DMN2710UFB

Datasheet Details

Part number DMN2710UFB
Manufacturer DIODES
File Size 534.72 KB
Description N-Channel MOSFET
Datasheet download datasheet DMN2710UFB Datasheet
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Full PDF Text Transcription

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ADVANCED INFORMATION DMN2710UFB N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS 20V RDS(ON) 0.45Ω @ VGS = 4.5V 0.6Ω @ VGS = 2.5V ID TA = +25°C 1.3A 1.2A Features and Benefits  Footprint of Just 0.6mm2—13 Times Smaller Than SOT23  Low Gate Threshold Voltage  Fast Switching Speed  ESD Protected Gate  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  For automotive applications requiring specific change control (i.e. parts qualified to AEC-Q100/101/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please contact us or your local Diodes representative. https://www.diodes.
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