* Low RDS(ON)
* ensures on state losses are minimized
* Small form factor thermally efficient package enables higher density end products
* Occupies just 33% of the board area occupied by SO-8 enabling smaller end product
* ESD Protected Gate
* Totally Lead-Free & Fully R
DMN3018SFGQ Datasheet (474.74 KB)
DMN3018SFGQ
474.74 KB
N-channel mosfet.
NEW PRODUCT DMN3018SFGQ 30V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS 30V RDS(ON) max 21mΩ @ VGS = 10V 35mΩ @ VGS = 4.5V ID max TA .
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