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DMN3067LW Datasheet N-Channel MOSFET

Manufacturer: Diodes Incorporated

General Description

This new generation MOSFET has been designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.

Applications  Switching  Power Management Functions SOT323 DMN3067LW N-CHANNEL ENHANCEMENT MODE MOSFET

Overview

ADVANCED INNEFWORPRMOADTIUOCNT Product Summary V(BR)DSS 30V RDS(ON) 67mΩ @ VGS = 4.5V 70mΩ @ VGS = 4.0V 98mΩ @ VGS = 2.5V ID TA = +25°C 2.6A 2.5A 2.

Key Features

  • Low On-Resistance.
  • Low Gate Threshold Voltage.
  • Low Input Capacitance.
  • Fast Switching Speed.
  • Small Surface Mount Package.
  • ESD Protected Gate.
  • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2).
  • Halogen and Antimony Free. “Green” Device (Note 3).
  • Qualified to AEC-Q101 Standards for High Reliability Mechanical Data.
  • Case: SOT323.
  • Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0.
  • Moisture Sensitivity: Level 1.