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DMN313DLT - N-Channel MOSFET

General Description

This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.

Backlighting DC-DC Converters Power management

Key Features

  • Low On-Resistance.
  • Low Input Capacitance.
  • Fast Switching Speed.
  • Low Input/Output Leakage.
  • Lead Free By Design/RoHS Compliant (Note 1).
  • ESD Protected up to 2kV.
  • "Green" Device (Note 2).
  • Qualified to AEC-Q101 Standards for High Reliability Mechanical Data.
  • Case: SOT-523.
  • Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0.
  • Moisture Sensitivity: Level.

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Full PDF Text Transcription for DMN313DLT (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for DMN313DLT. For precise diagrams, and layout, please refer to the original PDF.

NEW PRODUCT DMN313DLT N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS 30V RDS(ON) 2Ω @ VGS = 4V 3.2Ω @ VGS = 2.5V ID TA = 25°C 270mA 210mA Description and Appl...

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S = 4V 3.2Ω @ VGS = 2.5V ID TA = 25°C 270mA 210mA Description and Applications This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.

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