DMN31D5UFZ Datasheet N-CHANNEL ENHANCEMENT MODE MOSFET

Manufacturer: Diodes Incorporated

DMN31D5UFZ n-channel enhancement mode mosfet by Diodes Incorporated - Datasheet Preview

Datasheet Details

Part number	DMN31D5UFZ
Manufacturer	Diodes Incorporated
File Size	331.41 KB
Description	N-CHANNEL ENHANCEMENT MODE MOSFET
Download	DMN31D5UFZ Download (PDF)

General Description

This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.

Applications • General Purpose Interfacing Switch • Power Management Functions • Analog Switch

Overview

A D VNA EN CWEPDRNIOENDFWUOPCRRTMOADTUI COTN DMN31D5UFZ N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS 30V RDS(ON) max 1.5Ω @ VGS = 4.5V 2.0Ω @ VGS = 2.5V 3.0Ω @ VGS = 1.8V 4.5Ω @ VGS = 1.5V ID max TA = +25°C 0.

Key Features

Low Package Profile, 0.42mm Maximum Package Height.
0.62mm x 0.62mm Package Footprint.
Low On-Resistance.
Very Low Gate Threshold Voltage, 1.0V max.
ESD Protected Gate.
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2).
Halogen and Antimony Free. “Green” Device (Note 3) Mechanical Data.
Case: X2-DFN0606-3.
Case Material: Molded Plastic, “Green” Molding Compound UL Flammability Classification Rating 94V-0.

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