DMN31D5UDW Datasheet Dual N-Channel MOSFET

Manufacturer: Diodes Incorporated

Overview: DMN31D5UDW DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS 30V RDS(ON) Max 1.5Ω @ VGS = 4.5V 2.0Ω @ VGS = 2.5V 3.0Ω @ VGS = 1.8V 4.5Ω @ VGS = 1.5V ID Max @TA = +25°C 0.43A 0.37A 0.3A 0.

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Datasheet Details

Part number	DMN31D5UDW
Manufacturer	Diodes Incorporated
File Size	712.83 KB
Description	Dual N-Channel MOSFET
Download	DMN31D5UDW Download (PDF)

General Description

This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power-management applications.

Key Features

Low On-Resistance.
Low Gate Threshold Voltage.
Low Input Capacitance.
Fast Switching Speed.
Low Input/Output Leakage.
Ultra-Small Surface-Mount Package.
ESD Protected.
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2).
Halogen and Antimony Free. “Green” Device (Note 3).
For automotive.

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