DMN31D5UDW Datasheet | Diodes Incorporated

DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS 30V RDS(ON) Max 1.5Ω @ VGS = 4.5V 2.0Ω @ VGS = 2.5V 3.0Ω @ VGS = 1.8V 4.5Ω @ VGS = 1.5V ID Max @TA = +25°C 0.43A 0.37A 0.3A 0.25A Description This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power-management applications. Features and Benefits - Low On-Resistance - Low Gate Threshold Voltage - Low Input Capacitance - Fast Switching Speed - Low Input/Output Leakage - Ultra-Small Surface-Mount Package - ESD Protected - Totally Lead-Free & Fully RoHS pliant (Notes 1 & 2) - Halogen and Antimony...