• Part: DMN31D5UFZ
  • Description: N-CHANNEL ENHANCEMENT MODE MOSFET
  • Manufacturer: Diodes Incorporated
  • Size: 331.41 KB
Download DMN31D5UFZ Datasheet PDF
Diodes Incorporated
DMN31D5UFZ
DMN31D5UFZ is N-CHANNEL ENHANCEMENT MODE MOSFET manufactured by Diodes Incorporated.
A D VNA EN CWEPDRNIOENDFWUOPCRRTMOADTUI COTN N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS 30V RDS(ON) max 1.5Ω @ VGS = 4.5V 2.0Ω @ VGS = 2.5V 3.0Ω @ VGS = 1.8V 4.5Ω @ VGS = 1.5V ID max TA = +25°C 0.22A Description This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Applications - General Purpose Interfacing Switch - Power Management Functions - Analog Switch Features and Benefits - Low Package Profile, 0.42mm Maximum Package Height - 0.62mm x 0.62mm Package Footprint - Low On-Resistance - Very Low Gate Threshold...