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DMN31D5UFZ

Manufacturer: Diodes Incorporated

DMN31D5UFZ datasheet by Diodes Incorporated.

DMN31D5UFZ datasheet preview

DMN31D5UFZ Datasheet Details

Part number DMN31D5UFZ
Datasheet DMN31D5UFZ-Diodes.pdf
File Size 331.41 KB
Manufacturer Diodes Incorporated
Description N-CHANNEL ENHANCEMENT MODE MOSFET
DMN31D5UFZ page 2 DMN31D5UFZ page 3

DMN31D5UFZ Overview

This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Applications General Purpose Interfacing Switch Power Management Functions Analog Switch.

DMN31D5UFZ Key Features

  • Low Package Profile, 0.42mm Maximum Package Height
  • 0.62mm x 0.62mm Package Footprint
  • Low On-Resistance
  • Very Low Gate Threshold Voltage, 1.0V max
  • ESD Protected Gate
  • Totally Lead-Free & Fully RoHS pliant (Notes 1 & 2)
  • Halogen and Antimony Free. “Green” Device (Note 3)
  • Case: X2-DFN0606-3
  • Case Material: Molded Plastic, “Green” Molding pound
  • Moisture Sensitivity: Level 1 per J-STD-020
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