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DMN31D5UFZ - N-CHANNEL ENHANCEMENT MODE MOSFET

Description

This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.

General Purpose Interfacing Switch Power Management Functions An

Features

  • Low Package Profile, 0.42mm Maximum Package Height.
  • 0.62mm x 0.62mm Package Footprint.
  • Low On-Resistance.
  • Very Low Gate Threshold Voltage, 1.0V max.
  • ESD Protected Gate.
  • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2).
  • Halogen and Antimony Free. “Green” Device (Note 3) Mechanical Data.
  • Case: X2-DFN0606-3.
  • Case Material: Molded Plastic, “Green” Molding Compound UL Flammability Classification Rating 94V-0.

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Full PDF Text Transcription

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A D VNA EN CWEPDRNIOENDFWUOPCRRTMOADTUI COTN DMN31D5UFZ N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS 30V RDS(ON) max 1.5Ω @ VGS = 4.5V 2.0Ω @ VGS = 2.5V 3.0Ω @ VGS = 1.8V 4.5Ω @ VGS = 1.5V ID max TA = +25°C 0.22A Description This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Applications • General Purpose Interfacing Switch • Power Management Functions • Analog Switch Features and Benefits • Low Package Profile, 0.42mm Maximum Package Height • 0.62mm x 0.62mm Package Footprint • Low On-Resistance • Very Low Gate Threshold Voltage, 1.
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