DMN53D0L Datasheet N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Manufacturer: Diodes Incorporated

DMN53D0L n-channel enhancement mode field effect transistor by Diodes Incorporated - Datasheet Preview

Datasheet Details

Part number	DMN53D0L
Manufacturer	Diodes Incorporated
File Size	338.79 KB
Description	N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
Download	DMN53D0L Download (PDF)

General Description

and Applications This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power-management applications.

SOT23 Mechanical Data • Package: SOT23 • Package Material: Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0 • Moisture Sensitivity: Level 1 per J-STD-020 • Terminals: Matte Tin Finish Annealed over Alloy 42 Leadframe (Lead-Free Plating).

Overview

DMN53D0L N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Product Summary BVDSS 50V RDS(ON) 1.6Ω @ VGS = 10V 2.5Ω @ VGS = 4.

Key Features

N-Channel MOSFET.
Low On-Resistance.
Very Low Gate Threshold Voltage.
Low Input Capacitance.
Fast Switching Speed.
Low Input/Output Leakage.
ESD Protected.
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2).
Halogen and Antimony Free. “Green” Device (Note 3).
This part is qualified to JEDEC standards (as references in AEC-Q) for High Reliability. https://www. diodes. com/quality/product-definitions/.

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