DMN53D0L - N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Product Overview

Diodes

Datasheet Details

Part number	DMN53D0L
Manufacturer	DIODES
File Size	338.79 KB
Description	N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
Datasheet	DMN53D0L Datasheet
Additional preview pages of the DMN53D0L datasheet.

Product details

Description

and Applications This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power-management applications.SOT23 Mechanical Data Package: SOT23 Package Material: Molded Plastic, “Green” Molding Compound. Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Matte Tin Finish Annealed over Alloy 42 Leadframe (Lead-Fr

Features

N-Channel MOSFET.
Low On-Resistance.
Very Low Gate Threshold Voltage.
Low Input Capacitance.
Fast Switching Speed.
Low Input/Output Leakage.
ESD Protected.
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2).
Halogen and Antimony Free. “Green” Device (Note 3).
This part is qualified to JEDEC standards (as references in AEC-Q) for High Reliability. https://www. diodes. com/quality/product-definitions/.

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Published: Feb 4, 2016 |