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DMN601VKQ - DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Description

This MOSFET is designed to meet the stringent requirements of automotive applications.

General-purpose interfacing switches Power-management functions Analog switches

Features

  • Dual N-Channel MOSFET.
  • Low On-Resistance.
  • Low Gate Threshold Voltage.
  • Low Input Capacitance.
  • Fast Switching Speed.
  • Low Input/Output Leakage.
  • Ultra-Small Surface-Mount Package.
  • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2).
  • Halogen and Antimony Free. “Green” Device (Note 3).
  • The DMN601VKQ is suitable for automotive.

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Datasheet preview – DMN601VKQ

Datasheet Details

Part number DMN601VKQ
Manufacturer Diodes Incorporated
File Size 670.97 KB
Description DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
Datasheet download datasheet DMN601VKQ Datasheet
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Full PDF Text Transcription

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DMN601VKQ DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Product Summary BVDSS 60V RDS(ON) Max 2Ω @ VGS = 10V 3Ω @ VGS = 4.5V ID Max TA = +25°C 305mA 249mA Description and Applications This MOSFET is designed to meet the stringent requirements of automotive applications. It is qualified to AEC-Q101, supported by a PPAP, and is ideal for use in:  General-purpose interfacing switches  Power-management functions  Analog switches Features and Benefits  Dual N-Channel MOSFET  Low On-Resistance  Low Gate Threshold Voltage  Low Input Capacitance  Fast Switching Speed  Low Input/Output Leakage  Ultra-Small Surface-Mount Package  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free.
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