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DMP1012UCB9 Datasheet - Diodes

P-Channel MOSFET

DMP1012UCB9 Features

* LD-MOS Technology with the Lowest Figure of Merit: RDS(on) = 8.2mΩ to Minimize On-State Losses Qg = 8.1nC for Ultra-Fast Switching

* Vgs(th) = -0.8V typ. for a Low Turn-On Potential

* CSP with Footprint 1.5mm × 1.5mm

* Height = 0.62mm for Low Profile

* ESD =

DMP1012UCB9 General Description

This 3rd generation Lateral MOSFET (LD-MOS) is engineered to minimize on-state losses and switch ultra-fast, making it ideal for high efficiency power transfer. It uses Chip-Scale Package (CSP) to increase power density by combining low thermal impedance with minimal RDS(on) per footprint area. Fea.

DMP1012UCB9 Datasheet (226.69 KB)

Preview of DMP1012UCB9 PDF

Datasheet Details

Part number:

DMP1012UCB9

Manufacturer:

DIODES ↗

File Size:

226.69 KB

Description:

P-channel mosfet.
NEW PRODUCT AADDVVAANNCCEED IINNFFOORRMMAATTIIOONN DMP1012UCB9 P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary (Typ. @ VGS = -4.5V, TA = +25°C) V.

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DMP1012UCB9 P-Channel MOSFET Diodes

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