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Diodes Semiconductor Electronic Components Datasheet

DMP1012UCB9 Datasheet

P-CHANNEL ENHANCEMENT MODE MOSFET

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DMP1012UCB9
P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary (Typ. @ VGS = -4.5V, TA = +25°C)
VDSS
-8V
RDS(on)
8.2m
Qg
8.1nC
Qgd
1.8nC
ID
-10A
Description
This 3rd generation Lateral MOSFET (LD-MOS) is engineered to
minimize on-state losses and switch ultra-fast, making it ideal for high
efficiency power transfer. It uses Chip-Scale Package (CSP) to
increase power density by combining low thermal impedance with
minimal RDS(on) per footprint area.
Features
LD-MOS Technology with the Lowest Figure of Merit:
RDS(on) = 8.2mto Minimize On-State Losses
Qg = 8.1nC for Ultra-Fast Switching
Vgs(th) = -0.8V typ. for a Low Turn-On Potential
CSP with Footprint 1.5mm × 1.5mm
Height = 0.62mm for Low Profile
ESD = 6kV HBM Protection of Gate
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Applications
DC-DC Converters
Battery Management
Load Switch
Mechanical Data
Case: U-WLB1515-9
Terminal Connections: See Diagram Below
U-WLB1515-9
GSS
S SS
D DD
Top-View
Pin Configuration
Equivalent Circuit
Ordering Information (Note 4)
Notes:
Part Number
DMP1012UCB9-7
Case
U-WLB1515-9
Packaging
3,000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
U-WLB1515-9
XW = Product Type Marking Code
YM = Date Code Marking
Y or Y = Year (ex: B = 2014)
M or M = Month (ex: 9 = September)
Date Code Key
Year
Code
Month
Code
2012
Z
Jan Feb
12
2013
A
Mar
3
2014
B
Apr May
45
2015
C
Jun Jul
67
2016
D
Aug
8
Sep
9
2017
E
Oct
O
2018
F
Nov Dec
ND
DMP1012UCB9
Document number: DS36844 Rev. 7 - 2
1 of 6
www.diodes.com
January 2015
© Diodes Incorporated


Diodes Semiconductor Electronic Components Datasheet

DMP1012UCB9 Datasheet

P-CHANNEL ENHANCEMENT MODE MOSFET

No Preview Available !

Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 5) VGS = -4.5V
Steady
State
Continuous Drain Current (Note 6) VGS = -4.5V
Steady
State
Pulsed Drain Current (Pulse duration 10µs, duty cycle 1%)
TA = +25°C
TA = +70°C
TA = +25°C
TA = +70°C
Continuous Source Pin Current (Note 6)
Pulsed Source Pin Current (Pulse duration 10µs, duty cycle 1%)
Continuous Gate Current
Symbol
VDSS
VGSS
ID
ID
IDM
IS
ISM
IG
DMP1012UCB9
Value
-8
-6
-10
-8
-7.4
-6.0
-50
-2
-15
-0.5
Units
V
V
A
A
A
A
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Total Power Dissipation (Note 5)
Total Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient (Note 5)
Thermal Resistance, Junction to Ambient (Note 6)
Operating and Storage Temperature Range
Symbol
PD
PD
RθJA
RθJA
TJ, TSTG
Value
0.89
1.57
+142.1
+80.5
-55 to +150
Units
W
W
°C/W
°C/W
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Gate to Source Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
Symbol
@TC = +25°C
BVDSS
BVSGS
IDSS
IGSS
VGS(th)
Static Drain-Source On-Resistance
RDS (ON)
Forward Transfer Admittance
Diode Forward Voltage (Note 6)
Reverse Recovery Charge
Reverse Recovery Time
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Series Gate Resistance
Total Gate Charge (4.5V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
|Yfs|
VSD
Qrr
trr
Ciss
Coss
Crss
RG
Qg
Qgs
Qgd
tD(on)
tr
tD(off)
tf
Min
-8
-6
-0.4
Typ
-0.8
8.2
10
11
16.8
-0.7
6.3
18.5
817
595
269
1.9
8.1
0.9
1.8
6.2
22.6
30.1
22.7
Notes:
5. Device mounted on FR-4 PCB with minimum recommended pad layout.
6. Device mounted on FR4 material with 1-inch2 (6.45cm2), 2oz (0.071mm thick) Cu.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to production testing.
Max
-1
-100
-1.1
10
13
14
-1
1060
770
350
10.5
10
48
Unit
Test Condition
V VGS = 0V, ID = -250µA
V VDS = 0V, IG = -250µA
µA VDS = -4.0V, VGS = 0V
nA VGS = -4.0V, VDS = 0V
V VDS = VGS, ID = -250µA
VGS = -4.5V, ID = -2A
mVGS = -3.0V, ID = -2A
VGS = -2.5V, ID = -2A
S VDS = -4V, ID = -2A
V VGS = 0V, IS = -2A
nC Vdd = -5V, IF = -2A,
ns di/dt = 200A/µs
pF
pF
VDS = -4V, VGS = 0V,
f = 1.0MHz
pF
VDS = 0V, VGS = 0V, f = 1.0MHz
nC
nC VGS = -4.5V, VDS = -4V,
nC ID = -2A
ns
ns VDD = -4V, VGS = -4.5V,
ns IDS = -2A, RG = 10,
ns
DMP1012UCB9
Document number: DS36844 Rev. 7 - 2
2 of 6
www.diodes.com
January 2015
© Diodes Incorporated


Part Number DMP1012UCB9
Description P-CHANNEL ENHANCEMENT MODE MOSFET
Maker Diodes
Total Page 6 Pages
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