DMP1012UCB9 Datasheet P-Channel MOSFET

Manufacturer: Diodes Incorporated

DMP1012UCB9 p-channel mosfet by Diodes Incorporated - Datasheet Preview

Datasheet Details

Part number	DMP1012UCB9
Manufacturer	Diodes Incorporated
File Size	226.69 KB
Description	P-Channel MOSFET
Datasheet	DMP1012UCB9 Datasheet

General Description

This 3rd generation Lateral MOSFET (LD-MOS) is engineered to minimize on-state losses and switch ultra-fast, making it ideal for high efficiency power transfer.

It uses Chip-Scale Package (CSP) to increase power density by combining low thermal impedance with minimal RDS(on) per footprint area.

Overview

NEW PRODUCT AADDVVAANNCCEED IINNFFOORRMMAATTIIOONN DMP1012UCB9 P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary (Typ.

@ VGS = -4.5V, TA = +25°C) VDSS -8V RDS(on) 8.2mΩ Qg 8.1nC Qgd 1.

Key Features

LD-MOS Technology with the Lowest Figure of Merit: RDS(on) = 8.2mΩ to Minimize On-State Losses Qg = 8.1nC for Ultra-Fast Switching.
Vgs(th) = -0.8V typ. for a Low Turn-On Potential.
CSP with Footprint 1.5mm × 1.5mm.
Height = 0.62mm for Low Profile.
ESD = 6kV HBM Protection of Gate.
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2).
Halogen and Antimony Free. “Green” Device (Note 3).
Qualified to AEC-Q101 Standards for.

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