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DMP1011LFVQ - P-CHANNEL MOSFET

General Description

This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high efficiency power management applications.

It is qualified to AEC-Q101, supported by a PPAP.

Key Features

  • Low RDS(ON).
  • Ensures On-State Losses are Minimized.
  • Small Form Factor Thermally Efficient Package Enables Higher Density End Products.
  • Occupies just 33% of the Board Area Occupied by SO-8 Enabling Smaller End Product.
  • ESD Protected Up to 3kV.
  • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2).
  • Halogen and Antimony Free. “Green” Device (Note 3).
  • The DMP1011LFVQ is suitable for automotive.

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Full PDF Text Transcription for DMP1011LFVQ (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for DMP1011LFVQ. For precise diagrams, and layout, please refer to the original PDF.

ADAVDAAVDNAVCNAECNDECIDENI IFNNNOFEFROWORMRPAMRMTAIOATOIDTINOUONCNT DMP1011LFVQ P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS -12V RDS(ON) Max 11.7mΩ @ VGS = -4...

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T MODE MOSFET Product Summary BVDSS -12V RDS(ON) Max 11.7mΩ @ VGS = -4.5V 18.6mΩ @ VGS = -2.5V ID Max TC = +25°C -19A -15A Description This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high efficiency power management applications. It is qualified to AEC-Q101, supported by a PPAP.