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DMP1045U Datasheet

P-CHANNEL ENHANCEMENT MODE MOSFET

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DMP1045U
P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V(BR)DSS
-12V
RDS(on) max
31m@ VGS = -4.5V
45m@ VGS =-2.5V
ID
TA = +25°C
5.2A
4.3A
Description
This MOSFET is designed to minimize the on-state resistance
(RDS(ON)) and yet maintain superior switching performance, making it
ideal for high-efficiency power management applications.
Applications
DC-DC Converters
Power Management Functions
Analog Switch
Features and Benefits
Low On-Resistance
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
ESD Protected Up To 3kV
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case: SOT23
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram
Terminals: Finish Matte Tin Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208
Weight: 0.0072 grams (Approximate)
D
SOT23
DG
ESD PROTECTED TO 3kV
Top View
GS
Pin Configuration
Gate Protection
Diode
S
Internal Schematic
Ordering Information (Note 4)
Notes:
Part Number
DMP1045U-7
Case
SOT-23
Packaging
3,000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
15P
15P = Marking Code
YM = Date Code Marking
Y or Y = Year (ex: A = 2013)
M = Month (ex: 9 = September)
Date Code Key
Year
Code
Month
Code
2010
X
Jan Feb
12
DMP1045U
Document number: DS35051 Rev. 5 - 2
2011
Y
Mar Apr
34
2012
Z
May
5
Jun
6
2013
A
Jul Aug
78
1 of 6
www.diodes.com
2014
B
Sep Oct
9O
2015
C
Nov Dec
ND
April 2015
© Diodes Incorporated


Diodes Semiconductor Electronic Components Datasheet

DMP1045U Datasheet

P-CHANNEL ENHANCEMENT MODE MOSFET

No Preview Available !

DMP1045U
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Drain-Source Voltage
Characteristic
Gate-Source Voltage
Continuous Drain Current (Note 5) VGS = -4.5V
Steady
State
Continuous Drain Current (Note 5) VGS = -2.5V
Steady
State
Continuous Drain Current (Note 6) VGS = -4.5V
Steady
State
Continuous Drain Current (Note 6) VGS = -2.5V
Steady
State
Maximum Continuous Body Diode Forward Current (Note 6)
Pulsed Drain Current (10µs pulse, duty cycle=1%) (Note 5)
TA = +25°C
TA = +70°C
TA = +25°C
TA = +70°C
TA = +25°C
TA = +70°C
TA = +25°C
TA = +70°C
Symbol
VDSS
VGSS
ID
ID
ID
ID
IS
IDM
Value
-12
±8
4.0
3.1
3.3
2.6
5.2
4.2
4.3
3.4
2
40
Units
V
V
A
A
A
A
A
A
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient (Note 6)
Thermal Resistance, Junction to Case (Note 6)
Operating and Storage Temperature Range
Symbol
PD
RJA
PD
RJA
RJc
TJ, TSTG
Value
0.8
168
1.3
99
14.8
-55 to +150
Units
W
°C/W
W
°C/W
°C/W
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
Symbol
TJ = +25°C
BVDSS
IDSS
IGSS
VGS(th)
Static Drain-Source On-Resistance
RDS(ON)
Forward Transfer Admittance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistnace
SWITCHING CHARACTERISTICS (Note 8)
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
|Yfs|
VSD
Ciss
Coss
Crss
Rg
Qg
Qgs
Qgd
tD(on)
tr
tD(off)
tf
Min
-12
-0.3
Typ
-0.55
26
31
45
12
-0.6
1,357
504
235
14.1
15.8
2.0
3.9
15.7
23.3
91.2
106.9
Max
-1.0
±10
-1.0
31
45
75
Unit
Test Condition
V VGS = 0V, ID = -250µA
µA VDS = -12V, VGS = 0V
µA VGS = 8V, VDS = 0V
V VDS = VGS, ID = -250µA
VGS = -4.5V, ID = -4.0A
mΩ VGS = -2.5V, ID = -3.5A
VGS = -1.8V, ID = -2.7A
S VDS = -5V, ID = -4A
V VGS = 0V, IS = -1A
pF
pF
VDS = -10V, VGS = 0V
f = 1.0MHz
pF
VDS = 0V, VGS = 0V, f = 1.0MHz
nC
nC VGS = -4.5V, VDS = -10V, ID = -4A
nC
ns
ns VDS = -10V, VGS = -4.5V,
ns RL = 2.5, RG = 3.0
ns
Notes:
5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal vias to bottom layer 1inch square copper plate.
7 .Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to production testing.
DMP1045U
Document number: DS35051 Rev. 5 - 2
2 of 6
www.diodes.com
April 2015
© Diodes Incorporated


Part Number DMP1045U
Description P-CHANNEL ENHANCEMENT MODE MOSFET
Maker Diodes
Total Page 6 Pages
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