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DMP1005UFDF - P-CHANNEL ENHANCEMENT MODE MOSFET

General Description

This MOSFET is designed to minimize on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.

Key Features

  • 0.6mm Profile.
  • Ideal for Low Profile.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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ADVANCE INFORMATION DMP1005UFDF P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS -12V RDS(ON) Max 8.5mΩ @ VGS = -4.5V 12mΩ @ VGS = -2.5V ID Max TC = +25°C -26A -22A Description and Applications This MOSFET is designed to minimize on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Features and Benefits  0.6mm Profile – Ideal for Low Profile Applications  PCB Footprint of 4mm2  Low Gate Threshold Voltage  Low On-Resistance  ESD Protected up to 8kV  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  For automotive applications requiring specific change control (i.e.