Datasheet Summary
ADVANCE INFORMATION
P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
BVDSS -12V
RDS(ON) Max
8.5mΩ @ VGS = -4.5V 12mΩ @ VGS = -2.5V
ID Max TC = +25°C
-26A -22A
Description and Applications
This MOSFET is designed to minimize on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
Features and Benefits
- 0.6mm Profile
- Ideal for Low Profile Applications
- PCB Footprint of 4mm2
- Low Gate Threshold Voltage
- Low On-Resistance
- ESD Protected up to 8kV
- Totally Lead-Free & Fully RoHS pliant (Notes 1 & 2)
- Halogen and Antimony Free. “Green” Device (Note 3)
- For automotive...